Voltaje interno de una celda solar de película delgada

Post author:Jesus Capistran
Post published:November 5, 2022

Band energy diagram of Heterojunction thin film solar cells

Al diseñar una celda solar es importante realizar él calculo del campo eléctrico interno (Zona de agotamiento, y potencial eléctrico interno (Vbi)) de la interface principal. Esta zona esta ubicada donde se juntan los dos semiconductores que forman la heterounión np. Como ejemplo particular formaremos la heterounión de una celda solar entre sulfuro de antimonio plata (AgSbS2, tipo-p) y sulfuro de cadmio (CdS, tipo-n). Acompañame a revisar cuales son las ecuaciones que describen el Vbi tanto para una celda solar de heterounión como para una de homounión. https://www.youtube.com/watch?v=fAKLOmhhn6I Webinar en grupo de trabajo CIDS-BUAP durante estancia posdoctoral-conacyt, Asesor. Dr. Roman…

Attending the XV Surface and Vacuum conference

Post author:Jesus Capistran
Post published:October 10, 2022

My project has been to modify the popular antimony sulfide (Sb2S3) by adding silver atoms for turning the material from an orthorhombic crystal structure (anisotropic) to a cubic (isotropic) lattice similar to the halide Perovskite material.

Paper – High-Resistance Layers for Front Contact Interfaces in Sb2Se3 Solar Cells

Post author:Jesus Capistran
Post published:July 5, 2022

Introduction Literature review during a research project is essential to avoid duplicate work. I mean If something is already study we don't need to re-invent the wheel. In that case we should take advantage from the published paper to replicate the results and then push the knowledge forward with our new discoveries. This time I will read and take notes from the paper "High-Resistance Metal Oxide Window Layers for Optimal Front Contact Interfaces in Sb2Se3 Solar Cells" to learn about the insertion of Metal Oxides as High-Resistive Transport (HRT) layers in antimony selenide (Sb2Se3) solar cells (TCO/HRT/CdS/Sb2Se3/Au). It is already reported that…